100 A Vertical GaN Trench MOSFETs with a Current Distribution Layer

This paper reports on vertical GaN-based trench MOSFETs operating at 100 A for the first time. A current distribution layer (CDL) in a drift layer is employed for the high current operation. An effective insert position of the CDL is designed and, thereby, the current density of the MOSFET with the CDL is increased about 1.17 times higher than that of the MOSFET without the CDL. Large MOSFET chips with a drain current of up to 100 A are fabricated and their switching characteristics are demonstrated.