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December 1, 2017

Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices

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Authors

DJDong JiChinese University of Hong Kong, ShenzhenCGChirag GuptaUniversity of Wisconsin–MadisonSCSilvia H. ChanIllumina (United States)

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Ji et al. (2017) studied this question.

synapsesocial.com/papers/69d9e2fd2a25b240b7a3df05https://doi.org/10.1109/iedm.2017.8268359
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