In this paper, we present the latest advancements of sub 50 nm InGaAs/lnAIAs/lnP high electron mobility transistor (InP HEMT) devices that have achieved extrapolated Fmax above 1 THz. This extrapolation is both based on unilateral gain (1.2 THz) and maximum stable gain/maximum available gain (1.1 THz) extrapolations, with an associated fT of 385 GHz. This extrapolation is validated by the demonstration of a 3-stage common source low noise MMIC amplifier which exhibits greater than 18 dB gain at 300 GHz and 15 dB gain at 340 GHz.
No takes yet. Share an insight, caveat, or question.
Lai et al. (2007) studied this question.