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May 25, 2005Journal of Applied PhysicsOpen Access

Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

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Authors

NDN. DyakonovaCentre National de la Recherche ScientifiqueFTF. TeppeCentre National de la Recherche ScientifiqueJŁJ. ŁusakowskiUniversity of Warsaw

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Dyakonova et al. (2005) studied this question.

synapsesocial.com/papers/69da23eeba6014a02e835f3chttps://doi.org/10.1063/1.1921339
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