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May 1, 1980Japanese Journal of Applied PhysicsOpen Access

A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions

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Authors

TMTakashi MimuraShowa UniversitySHS. HiyamizuOsaka University of EconomicsTFToshio FujiiKirin (Japan)

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Mimura et al. (1980) studied this question.

synapsesocial.com/papers/69da23eeba6014a02e835f42https://doi.org/10.1143/jjap.19.l225
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