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We have successfully determined the bulk minority-carrier lifetime in BaSi2 epitaxial films by utilizing a drastic enhancement of lifetime by post-growth annealing at 800 °C, which is attributed to strain relaxation. From the film-thickness dependence of lifetime, we reveal that the bulk lifetime is 14 µs, which is long enough for thin-film solar cell applications. In addition, the sum of surface and interface recombination velocities is found to be as low as 8.3 cm/s presumably due to the ionic nature of BaSi2. This confirms that BaSi2 is promising as an absorption-layer material for earth-abundant thin-film solar cells.
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Hara et al. (2013) studied this question.
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