Review demonstrates thermal vapor deposition outperforms sulfurization for synthesizing molybdenum disulfide monolayers, highlighting scalable routes toward high-quality electronics.
The ‘ self‐limiting ’ character of graphene growth on the surface of metals such as Ni and Cu makes CVD the natural choice for growing large‐area and continuous graphene films. Beyond graphene, absence of the self‐limiting property results in a challenge to achieving large‐area, high‐quality two‐dimensional (2D) crystals by CVD. Recent studies of structural, optical, and electrical properties of MoS 2 ‐based atomic layers grown by CVD are reviewed, concluding that thermal vapor deposition will outperform thermal vapor sulfurization in producing the required materials. Whether gaseous sources will replace the now dominant solid sources in direct deposition methods is an open issue. The latest progression in various CVD techniques used in MoS 2 growth and their resultant products are discussed and compared.
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Liu et al. (2015) studied this question.
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