What question did this study set out to answer?

This work aims to evaluate the impact of tunneling oxide and its formation method on the reliability of Si3N4-based resistive-switching memory devices.

April 12, 2026ACS Nanoscience AuOpen Access

Introduction of Tunneling Oxide and Oxidation Process Effects for Reliable Si-Compatible Resistive-Switching Random-Access Memory

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Authors

YLY. S. LeeEwha Womans University SKSoomin KimDongguk University SKSeongmin KimDongguk University

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Investigations show improved reliability in silicon-based RRAM with tunneling oxide, suggesting better performance for data storage.

Key Points

This work aims to evaluate the impact of tunneling oxide and its formation method on the reliability of Si3N4-based resistive-switching memory devices.
Inserted tunneling oxide layers in RRAM devices
Utilized plasma-enhanced chemical vapor deposition (PECVD) and medium-temperature oxidation (MTO)
Compared performance against a single-layer reference device
Conducted X-ray photoelectron spectroscopy for chemical analysis
Devices with tunneling oxide showed reduced state current
MTO-prepared devices had superior endurance and retention
All devices exhibited space-charge-limited current conduction in the high-resistance state
MTO oxide layer showed higher chemical stability, impacting endurance characteristics

Cite This Study

Lee et al. (2026) studied this question.

synapsesocial.com/papers/69db365c4fe01fead37c48cb https://doi.org/10.1021/acsnanoscienceau.6c00003

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Introduction of Tunneling Oxide and Oxidation Process Effects for Reliable Si-Compatible Resistive-Switching Random-Access Memory

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Key Points

Cite This Study

Introduction of Tunneling Oxide and Oxidation Process Effects for Reliable Si-Compatible Resistive-Switching Random-Access Memory

Discussion

Member takes

Implication

Key Points

Cite This Study

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