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We present and discuss a novel dopant control technique for compound semiconductors, called site-competition epitaxy, which enables a much wider range of reproducible doping control and affords much higher and lower epilayer doping concentrations than was previously possible. Site-competition epitaxy is presented for the chemical vapor deposition of 6H-SiC epilayers on commercially available (0001)SiC silicon-face substrates. Results from utilizing site-competition epitaxy include the production of degenerately doped SiC epilayers for ohmic-as-deposited (i.e., unannealed) metal contacts as well as very low doped epilayers for electronic devices exhibiting SiC record-breaking reverse voltages of 300 and 2000 V for 3C- and 6H-SiC p-n junction diodes, respectively.
Larkin et al. (Mon,) studied this question.