What question did this study set out to answer?

To investigate polarization switching kinetics in ferroelectric thin films over broad timeframes and evaluate the validity of the classical Kolmogorov-Avrami-Ishibashi model.

December 23, 2002Physical review. B, Condensed matterOpen Access

Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films

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To investigate polarization switching kinetics in ferroelectric thin films over broad timeframes and evaluate the validity of the classical Kolmogorov-Avrami-Ishibashi model.
Measured switching polarization currents in modified Pt/Pb(Zr,Ti)O3/Pt thin films as a function of applied voltage.
Tracked switching kinetics over an extended temporal window spanning from 10 ns to 1 s.
Developed a theoretical model treating the thin film as an ensemble of independent regions governed by a nucleation probability distribution.
Observed time and electric field dependences of switching polarization that qualitatively disagree with Kolmogorov-Avrami-Ishibashi domain coalescence predictions across broad time intervals.
Demonstrated that an alternative model based on independent reverse domain nucleation events accurately describes switching polarization dynamics in ferroelectric films for memory applications.

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Implication

Experimental analysis demonstrates non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films, highlighting nucleation-limited polarization dynamics for memory devices.

Cite This Study

Tagantsev et al. (2002) studied this question.

synapsesocial.com/papers/69dbd88dc9a120f055a3cb8c https://doi.org/10.1103/physrevb.66.214109

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Implication

Experimental analysis demonstrates non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films, highlighting nucleation-limited polarization dynamics for memory devices.

Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films

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Implication

Cite This Study

Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films

Key Points

Discussion

Implication

Cite This Study

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