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We report ferroelectric (FE) laminate HSO/HZO MFMIS FeFETs. An MFM/MIS area ratio control enables low voltage operation and 10 5 endurance. FE lamination (2 × 10 nm, 4 × 5 nm) and low FE anneal reduce the FeFET variability. Impact of the stack (MFMIS), material type/lamination, and FE anneal are studied for enhanced FeFET reliability and reduced variability.
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Ali et al. (2022) studied this question.
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