Measurements are made of resonant first‐ and second‐order Raman scattering by phonons in InP for photon energies from 1.75 to 3.05 eV. The behaviour of all observed resonances can be well explained by effects due to the E 0 + Δ 0 and the E 1 band gaps. A comparison of the first‐order deformation potential at E 1 with the one of GaAs is made and several electron‐two‐phonon deformation potentials are evaluated.
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Sinyukov et al. (1978) studied this question.
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