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Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x10¹⁹cm⁻³ is achieved. A Germanium gain spectrum of nearly 200nm is observed.
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Camacho‐Aguilera et al. (2012) studied this question.
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