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August 31, 2015Advanced Materials

Resistive Switching Behavior in Organic–Inorganic Hybrid CH3NH3PbI3−xClx Perovskite for Resistive Random Access Memory Devices

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Authors

EYEun Ji YooKorea Advanced Institute of Science and TechnologyMLMiaoqiang LyuThe University of QueenslandJYJung‐Ho YunNexen (Canada)

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Yoo et al. (2015) studied this question.

synapsesocial.com/papers/69dc94cc4006ebb8efe52e4dhttps://doi.org/10.1002/adma.201502889
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