Resistive switching mechanism of Ti/HfOx/Pt memory devices was studied using X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy images. Spatial distributions of valence of Hf demonstrated that the fraction of Hf4+ increased from Ti/HfOx interface to HfOx/Pt interface in high resistance state (HRS), but it maintained a constant level in low resistance state (LRS). Rupture of oxygen vacancies formed conducting paths occurred near the HfOx/Pt interface. The cross sectional images of active switching region also varied with HRS and LRS. A dynamic model of interface processes was proposed to interpret interfaces migration of oxygen vacancies near both the top and bottom electrodes.
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Lin et al. (2013) studied this question.
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