A Solution‐Processable Donor–Acceptor Compound Containing Boron(III) Centers for Small‐Molecule‐Based High‐Performance Ternary Electronic Memory Devices

A novel small-molecule boron(III)-containing donor-acceptor compound has been synthesized and employed in the fabrication of solution-processable electronic resistive memory devices. High ternary memory performances with low turn-on (V(Th1)=2.0 V) and distinct threshold voltages (V(Th2)=3.3 V), small reading bias (1.0 V), and long retention time (>10(4) seconds) with a large ON/OFF ratio of each state (current ratio of "OFF", "ON1", and "ON2"=1:10(3):10(6)) have been demonstrated, suggestive of its potential application in high-density data storage. The present design strategy provides new insight in the future design of memory devices with multi-level transition states.