The Ettingshausen effect in semiconductors is mainly due to the generation of electron-hole pairs at one side of the sample and their recombination at the other side. The Ettingshausen coefficient is calculated, in agreement with Putley, as P=(Egκec)z(1+z)^-2(μₑ+μₕ) where z=(nₕμₕnₑμₑ)-ratio of hole conductivity to electron conductivity. Eg is the gap energy, and κ the thermal conductivity. We discuss this formula for intrinsic, p-type and n-type semiconductors. P goes through a maximum for p-type semiconductors near the temperature at which the Hall voltage goes through zero. Our results agree reasonably well with the measurements of Mette, G\"artner, and Loscoe of P as a function of temperature for different samples of germanium and silicon.
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Paranjape et al. (1960) studied this question.
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