Perovskite and Conjugated Polymer Wrapped Semiconducting Carbon Nanotube Hybrid Films for High-Performance Transistors and Phototransistors

Although organic-inorganic halide perovskites continue to generate considerable interest due to great potentials for various optoelectronic devices, there are some critical obstacles to practical applications, including lead toxicity, relatively low field-effect mobility, and strong hysteresis during operation. This paper proposes a universal approach to significantly improve mobility and operational stability with reduced dual-sweep hysteresis for perovskite-based thin film transistors (TFTs) by coupling low-dimensional lead-free perovskite material (C₆H₅C₂H₄NH₃)₂SnI₄ (hereafter abbreviated as (PEA)₂SnI₄) with embedded conjugated polymer wrapped semiconducting carbon nanotubes (semi-CNTs). In (PEA)₂SnI₄/semi-CNT hybrid TFTs, semi-CNTs can provide highway-like transport paths, enabling smoother carrier transport with less trapping and scattering. We also demonstrate the performance of (PEA)₂SnI₄/semi-CNT hybrid phototransistors with ultrahigh photoresponsivity ( R) of 6.3 × 10⁴ A/W and detectivity ( D*) of 1.12 × 10¹⁷ Jones, which is about 2 or 3 orders of magnitude higher than that of the best devices available to date. The results indicate promising potentials for solution-processed perovskite/semi-CNT hybrid platforms, and the developed strategy can be applied for high-performance perovskite nanomaterial optoelectronics.