What question did this study set out to answer?

To review the physical processes and governing mechanisms that dictate dielectric, piezoelectric, and ferroelectric properties in thin films and ceramic materials for device applications.

September 1, 1998Reports on Progress in PhysicsOpen Access

Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics

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Authors

DDDragan DamjanovićÉcole Polytechnique Fédérale de Lausanne

Discussion

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Implication

Review reveals functional and electromechanical mechanisms in ferroelectric films and ceramics, highlighting operational limits for memory and micro-electromechanical systems.

Key Points

To review the physical processes and governing mechanisms that dictate dielectric, piezoelectric, and ferroelectric properties in thin films and ceramic materials for device applications.
Synthesized theoretical frameworks covering crystal symmetry, dielectricity, pyroelectricity, and electromechanical coupling.
Evaluated device-critical phenomena including polarization switching dynamics, fatigue mechanisms, defect impacts, and depolarization fields.
Determined that defect structures, depletion layers, and depolarization fields strongly modify polarization switching and hysteresis loop symmetry.
Identified domain-wall displacement as a primary extrinsic contributor to overall dielectric and piezoelectric performance.
Highlighted operational degradation pathways such as polarization fatigue that limit reliability in ferroelectric memories and micro-electro-mechanical systems.

Cite This Study

Dragan Damjanović (1998) studied this question.

synapsesocial.com/papers/69de6f70e02db3e29db0c4c1 https://doi.org/10.1088/0034-4885/61/9/002

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September 1, 1998Reports on Progress in PhysicsOpen Access

Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics

View Full Paper

Ask AI

Bookmark

Authors

DDDragan DamjanovićÉcole Polytechnique Fédérale de Lausanne

Discussion

Member takes

Implication

Review reveals functional and electromechanical mechanisms in ferroelectric films and ceramics, highlighting operational limits for memory and micro-electromechanical systems.

Key Points

To review the physical processes and governing mechanisms that dictate dielectric, piezoelectric, and ferroelectric properties in thin films and ceramic materials for device applications.
Synthesized theoretical frameworks covering crystal symmetry, dielectricity, pyroelectricity, and electromechanical coupling.
Evaluated device-critical phenomena including polarization switching dynamics, fatigue mechanisms, defect impacts, and depolarization fields.
Determined that defect structures, depletion layers, and depolarization fields strongly modify polarization switching and hysteresis loop symmetry.
Identified domain-wall displacement as a primary extrinsic contributor to overall dielectric and piezoelectric performance.
Highlighted operational degradation pathways such as polarization fatigue that limit reliability in ferroelectric memories and micro-electro-mechanical systems.

Cite This Study

Dragan Damjanović (1998) studied this question.

synapsesocial.com/papers/69de6f70e02db3e29db0c4c1 https://doi.org/10.1088/0034-4885/61/9/002

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