The radiation-induced defect centers in a low-loss Corning germanium-doped optical fiber have been studied. In addition to silicon E′ centers, four germanium-related centers, corresponding to electrons trapped at the site of oxygen vacancies in s p3 orbitals of germanium ions with zero to three next-nearest-neighbor germaniums, were observed. A model which assumes Gaussian distributions in the excited-state energy-level splittings has been successfully used to computer simulate the ESR spectrum of the irradiated fiber.
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Friebele et al. (1974) studied this question.
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