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September 23, 2016Nano Letters

Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application

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KKKyung Min KimKorea Advanced Institute of Science and TechnologyJZJiaming ZhangState Grid Corporation of China (China)CGCatherine E. GravesGoogle (United States)

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Kim et al. (2016) studied this question.

synapsesocial.com/papers/69dec5ea40ea0656795596d7https://doi.org/10.1021/acs.nanolett.6b01781
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