We demonstrate room temperature coherent generation and control of a directional photocurrent in bulk GaAs via simultaneous one- and two-photon interband absorption processes using phase-related 1 ps or 175 fs pulses at 0.775 and 1.55μm. Electrical currents generated in low-temperature-grown (LT) and normal bulk GaAs are collected via gold electrodes. Current densities as high as 3nA/μm² in LT-GaAs are measured for injected carrier densities as low as 10¹⁴cm^-3 and for peak irradiances of 18MWcm^-2 ( 1.550μm) and 3kWcm^-2 ( 0.775μm).
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Haché et al. (1997) studied this question.
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