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We show theoretically that interband transitions in a bulk semiconductor via coherent one- and two-photon absorption leads to the formation of an electrical current whose direction is controlled by the relative phase of the beams. The phenomenon can occur in centrosymmetric and noncentrosymmetric materials; easily measurable currents are predicted for GaAs under realistic experimental conditions.
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Atanasov et al. (1996) studied this question.
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