Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
August 29, 2019Physical Review LettersOpen Access

Route to High Hole Mobility in GaN via Reversal of Crystal-Field Splitting

View Full Paper
Ask AI
Bookmark
Share

Authors

SPSamuel PoncéEuropean Theoretical Spectroscopy FacilityDJDebdeep JenaCornell UniversityFGFeliciano GiustinoThe University of Texas at Austin

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Poncé et al. (2019) studied this question.

synapsesocial.com/papers/69df12c6d5404a0bea591c8chttps://doi.org/10.1103/physrevlett.123.096602
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Strained GaN quantum-well FETs on single crystal bulk AlN substrates2017 · 73 citations
  2. 2Electrical transport limited by electron-phonon coupling from Boltzmann transport equation: An<i>ab initio</i>study of Si, Al, and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>2015 · 250 citations
  3. 3Electron-phonon interaction using Wannier functions2007 · 955 citations
  4. 4MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures2017 · 116 citations
  5. 5Hall-effect analysis of GaN films grown by hydride vapor phase epitaxy1998 · 66 citations