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March 9, 1998Applied Physics Letters

Hall-effect analysis of GaN films grown by hydride vapor phase epitaxy

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Authors

WGWerner GötzUniversity of BonnLRLucia RomanoPaul Scherrer InstituteJWJ. WalkerCommonwealth Scientific and Industrial Research Organisation

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Götz et al. (1998) studied this question.

synapsesocial.com/papers/6a9037946bfd95d7bd4dd04ehttps://doi.org/10.1063/1.121017
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