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Measuring the current-voltage characteristic of organic bulk heterojunction solar devices sometimes reveals an S-shaped deformation. We qualitatively produce this behavior by a numerical device simulation assuming a reduced surface recombination. Furthermore we show how to experimentally create these double diodes by applying an oxygen plasma etch on the indium-tin-oxide anode. Restricted charge transport over material interfaces accumulates space charges and therefore creates S-shaped deformations. Finally we discuss the consequences of our findings for the open-circuit voltage V₎₂.
Wagenpfahl et al. (Thu,) studied this question.