Experimental study demonstrates polar distribution controls piezoelectric response in aluminum nitride thin films, highlighting a proportional relationship that enables polarity engineering.
The authors have investigated the influence of the crystal orientation and the polar distribution on the piezoelectric response of aluminum nitride (AlN) thin films prepared on Si, Mo∕Si, and Mo∕AlN-interlayer (IL)/Si substrates with increasing sputtering power. The crystal orientation of films prepared on Si improves with increasing sputtering power. On the other hand, the crystal orientation of films prepared on Mo∕Si and Mo∕AlN-IL∕Si hardly changes. However, the piezoelectric response of all the films drastically changes from negative to positive values and the predominant polarity changes from N polarity to Al polarity. We found the proportional relationship between the polar distribution and piezoelectric response.
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Kamohara et al. (2008) studied this question.
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