Based on a circuit point of view, a high-performance negative differential resistance (NDR) element is designed and a possible compact device implementation is presented. The NDR structure exhibits ultrahigh peak-to-valley current ratio and also high switching speed. The corresponding process and design are completely compatible with contemporary Si CMOS technology, as they rely on coupled transistor structures. A single-NDR element static-random-access-memory cell prototype with a compact size and high speed is proposed as an interesting application suitable for embedded memory.
No takes yet. Share an insight, caveat, or question.
Chen et al. (2009) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: