We explore symmetry-breaking phenomena in MnPS3/TMDC (MoS2, WS2, MoSe2, WSe2) heterostructures using first-principles calculations, considering two high-symmetry stacking configurations, S1 and S2, which differ not only by their interfacial registry but also by a 30° twist between the layers. Depending on the stacking geometry, the systems exhibit two distinct types of nonrelativistic spin splitting (NRSS): S2 hosts altermagnetic-like band crossings, while S1 shows global spin splitting characteristic of symmetry-breaking NRSS. Magnetic exchange and anisotropy parameters indicate that the intrinsic magnetic properties of MnPS3 are largely preserved upon interfacing. The rotation of Mn spins generates valley splitting in the heterostructure conduction band, enabling magnetically controlled valley-selective optical responses in MnPS3/TMDC heterostructures. Our results identify MnPS3 as a symmetry-tunable antiferromagnetic substrate capable of inducing and controlling spin and valley effects in 2D heterostructures without relying on net magnetization or strong SOC, offering a route toward nonvolatile valleytronic functionalities.
Wrzos et al. (Thu,) studied this question.
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