EOT Scaling Via 300mm MX2 Dry Transfer - Steps Toward a Manufacturable Process Development and Device Integration

We demonstrate a low-temperature automation-compatible, and reproducible 300mm MX2 dry transfer process. We have successfully transferred 300mm WS2 in a repeatable process flow with >99.5% morphological yield. In-FAB integrated transistors fabricated via this route have >99% electrical yield on best wafers and is comparable to that obtained from analogous direct-grown WS2 integrated wafers. Further, we also demonstrate back-EOT scaling down to 2nm that is otherwise out of scope via high temperature direct growth. This transfer process facilitates a viable route to implement scaled MX2 devices for FEOL CFET, and BEOL active circuits.