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The study aims to understand the valence change mechanism in memristors through the quantification of oxygen vacancies.

April 21, 2026Nature CommunicationsOpen Access

Atomic-scale quantification of individual oxygen vacancies and structural evolution in valence change memristors

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This research quantifies oxygen vacancies in memristors, revealing structural changes that impact device reliability.

The study aims to understand the valence change mechanism in memristors through the quantification of oxygen vacancies.
Utilized in-situ transmission electron microscopy to observe oxygen vacancies during resistive switching.
Analyzed the effects of different oxygen vacancy concentrations on material structure and device performance.
Implemented a protective amorphous layer to study its impact on device stability.
Fewer than 3 oxygen vacancies maintain a stable structure, while 3 or more vacate trigger degradation.
A phase transition from orthorhombic to cubic occurs with increased oxygen loss, affecting device stability.
Adding an amorphous SrNbO3 layer significantly improves switching reversibility by reducing oxygen loss.

Wang et al. (2026) studied this question.

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