Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

Recent advances in wearable electronics, augmented and virtual reality systems, and head‐up displays have increased the demand for display technologies offering ultra‐high pixel density, flexible form factors, and low power consumption. Organic light‐emitting diodes (OLEDs) are well suited to these requirements due to their self‐emissive operation, high contrast ratios, and excellent color fidelity. However, conventional active‐matrix (AM) pixel architectures based on one‐transistor‐one‐capacitor (1T‐1C) configurations suffer from high driving voltages, increased dynamic power loss, and large capacitor footprints. Here, we present a germanium telluride (GT) memristor‐driven AMOLED system that replaces the conventional driving 1T‐1C architecture with a single two‐terminal memristor capable of nonvolatile resistance switching. The fabricated GT memristors exhibit ultralow switching voltages below ±0.2 V, low steady‐state power consumption of ∼200 nW at 10 µA, and stable resistance retention exceeding 10 3 s. Excellent temporal and thermal stability is achieved, and a 10 × 10 memristor‐driven OLED array successfully demonstrates capacitor‐free AM operation. Moreover, multilevel resistance states enable continuous and precise control of OLED luminance, providing a scalable pathway toward energy‐efficient, high‐resolution display technologies for next‐generation portable electronics.