Aluminum Oxynitride‐Engineered Transparent Aluminum Nitride Resistive Memory for Low‐Leakage Multilevel Switching in Micro‐LED Pixels

Transparent micro light‐emitting diode (LED) displays require driving elements that exhibit low off‐state current, stable multilevel switching, and high optical transmittance. Oxide‐based transparent resistive memories, however, undergo significant oxygen exchange with indium tin oxide (ITO) electrodes, which results in high leakage current and unstable switching windows. Nitride‐based devices provide improved interfacial stability but typically show abrupt binary switching caused by deep nitrogen vacancy (V N ) traps, limiting reliable multilevel operation. This study presents an aluminum nitride (AlN)‐based transparent resistive memory incorporating a uniform ultrathin aluminum oxynitride (AlON) interfacial layer. By precisely controlling reactive sputtering conditions, oxygen incorporation at the ITO/AlN interface is regulated, forming a stable AlON transition layer that suppresses leakage pathways and introduces shallow, distributed traps. The device operates through Poole–Frenkel conduction, achieving reduced off‐state current while enabling four reproducible resistance states suitable for grayscale modulation. The ITO/AlON/AlN 0.81 /ITO stack maintains ∼79% optical transmittance in the blue spectral region, ensuring minimal loss during vertical integration with micro‐LEDs. Temperature‐dependent measurements confirm stable resistance separation under self‐heating conditions. Integration with a micro‐LED pixel demonstrates stepwise modulation of emission intensity without spectral distortion. These findings establish the AlON/AlN structure as an effective low‐leakage, multilevel‐capable driving element for transparent micro‐LEDs.