Electrochemical memristive devices have emerged as a compelling hardware platform for brain‐inspired computing and in‐memory communication because ion migration and electrochemical redox reactions can enable nonvolatile, multilevel, and analog resistance modulation. This review primarily focuses on advances reported from 2020 to 2025 while selectively citing earlier foundational studies needed to establish switching physics, device architectures, and benchmarking context. We compare electrochemical metallization, valence change, and thermochemical switching in terms of how ionic transport, defect redistribution, and electrothermal feedback influence linearity, variability, retention, and energy consumption. Recent progress in metal oxides, chalcogenides, layered two‐dimensional hosts, conducting polymers, and oxygen‐ion conductors is discussed together with the effects of electrode selection, interface engineering, and CMOS‐compatible integration. We further reevaluate key neuromorphic metrics by distinguishing digital read‐margin metrics from analog‐training metrics and by positioning electrochemical memristors against biological and CMOS neuromorphic benchmarks. By linking mechanism‐level design choices to array‐level functionality, this review outlines practical routes toward more reliable and scalable electrochemical memristive hardware for next‐generation neuromorphic computing.
Xu et al. (Thu,) studied this question.