This randomized trial investigates current and temperature stress effects on HBT reliability, indicating critical impacts on device performance.
The reliability of InGaP/GaAs N-p-n heterojunction bipolar transistors (HBTs) with different base metal contact systems (Au/Zn/Au, Ti/Au, Ti/Pt/Au and the novel Ti/ZrB2/Au) under current and temperature stress is studied in this paper. We further report results of current stress on three p-GaAs doping Impurities namely Zn, Be and C. The effect of O+/H+ and O+/He+ ions, used in the fabrication of planar self-aligned HBTs, is also investigated in the stability of device de current gain, The instability phenomena typical of each factors and their effects on the HBT characteristics are reported.
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Rezazadeh et al. (1999) studied this question.
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