GaN-based n-p-n heterojunction bipolar transistors employing Mg-doped GaInN multiple-quantum well structure as p-type base region

We fabricated and characterized GaN-based n-p-n type heterojunction bipolar transistors (HBTs) with a Mg-doped GaInN multiple quantum-well (MQW) structure as the p-type base region. It was confirmed that two-dimensional holes were generated in the Mg-doped GaInN MQW structure and enhanced the lateral hole conduction in the base region. The fabricated HBTs were found to have good electrical properties for the base/emitter and base/collector p-n junctions and exhibited good output pinch-off characteristics with a current gain of 21. The device simulation indicated that the uniform and high-concentration hole distribution can be realized in the p-GaInN MQW base region.