What question did this study set out to answer?

The aim is to investigate the performance of p-channel GaN/AlInGaN HFETs with enhancements in design and composition.

p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

View Full Paper

Ask AI

Bookmark

The aim is to investigate the performance of p-channel GaN/AlInGaN HFETs with enhancements in design and composition.
Conducted analysis of enhancement and depletion mode HFETs with varying backbarrier compositions.
Examined the effects of a highly p-doped GaN cap layer on device performance.
Utilized gate recessing techniques.
Achieved ON/OFF ratios of up to 10^8.
Subthreshold swings measured at approximately 75 mV/decade.

No takes yet. Share an insight, caveat, or question.

Comprehensive study explores the performance of p-channel HFETs using quaternary backbarriers, indicating potential for nitride-based logic.

Hahn et al. (2013) studied this question.

View Full Paper

Ask AI

Bookmark

Comprehensive study explores the performance of p-channel HFETs using quaternary backbarriers, indicating potential for nitride-based logic.