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November 11, 1968Physical Review Letters

Reversible Electrical Switching Phenomena in Disordered Structures

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Authors

SOStanford R. OvshinskyBASF (United States)

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Implication

Experimental study demonstrates electric field-induced reversible switching in disordered semiconductors, highlighting novel mechanisms for electronic conduction.

Key Points

  • Characterize rapid and reversible transitions between highly resistive and conductive states induced by an electric field in disordered semiconductors.
  • Measured electrical switching behavior across multiple disordered semiconducting material compositions under applied electric fields.
  • Characterized switching parameters and chemical compositions of representative disordered semiconductor materials.
  • Observed rapid, reversible transitions between high-resistance and high-conduction states driven by threshold electric fields.
  • Established baseline switching parameters and proposed microscopic conduction mechanisms governing disordered electronic states.

Cite This Study

Stanford R. Ovshinsky (1968) studied this question.

synapsesocial.com/papers/69f2bb3fcc5217446faee1fchttps://doi.org/10.1103/physrevlett.21.1450
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