Gallium oxide in field effect transistors—A perspective

Considering growing interest in β-Ga2O3 channel metal–oxide–semiconductor FET, we revisit Ga2O3 based gate stack innovations, which enabled GaAs based power MOSFET development two decades ago. Fabricated MOSFETs matched ideal model predictions including a subthreshold swing of 60 mV/dec. We reason that the amorphous oxide (Gd5Ga3O12) engineered for Ga2O3 based gate stacks has the potential to be a suitable high-k dielectric for β-Ga2O3 channel MOSFETs due to its proven compatibility with Ga2O3. The introduction of heterostructures into the MOSFET channel architecture at the time to improve FET reliability could be a conceivable precursor for reliable β-Ga2O3 MOSFET operation.