Short-Wavelength Infrared Imaging with Organic Photodetectors Based on Non-Fullerene Acceptors with Detection above 1200 nm.

Jones, outperforming benchmark commercial silicon detectors in the shortwave infrared (SWIR) range, while maintaining stable photoresponse over 3 million on/off illumination cycles. Furthermore, a prototype blade-coated active-matrix imager is fabricated in air on an amorphous silicon backplane. The imager exhibits a broadband light detection range spanning from visible to SWIR, enabling practical applications such as faint infrared light imaging, semiconductor wafer inspection, LiDAR light detection, and banknote verification. Combined with detailed materials cost analysis, this work represents the first demonstration of an integrated active-matrix imager employing a fully organic semiconductor photoactive layer capable of high-speed SWIR imaging, highlighting its promise for a scalable and cost-effective next-generation SWIR photodetector.