High-Accuracy Characterization of a Single Thin Film on a Substrate from One Transmittance Spectrum by an Advanced Envelope Method Addressing Voids, Tail Electron Transitions, and Deep-Level Electron Transitions in a-Si Films

In most amorphous materials, the concentration of Urbach tail states is larger than the concentration of dangling bond states. However, absorption accounting for the Urbach tail while disregarding the dangling bonds is commonly used or derived by spectroscopic characterizations of amorphous films from a single spectrum, mostly due to the insufficient accuracy of such characterizations. This paper proposes an advanced envelope method (AEM) for transmittance spectrum T(λ), aiming to resolve this problem. The novelties in AEM are: improved preprocessing of T(λ), extending the envelopes deeper into the region of strong absorption (RSA), enhanced determination of the refractive index n(λ) in the region of weak absorption, optimization of both n(λ) and the extinction coefficient k(λ) in RSA, as well as analysis of the types of electron transitions and calculation of their energy gaps. Three single magnetron sputtered a-Si films deposited on glass substrates are characterized by AEM, and three other relevant methods that disregard deep-levels. The best accuracy is achieved when these films are characterized by AEM. It is demonstrated that the absorption coefficient α(λ) of each of these films distinguishes electron transitions via dangling bond states from those via tails states, and the DOS corresponds to the Mott–Davis model of amorphous materials.