Evaluates electrical changes in gallium oxide devices after neutron exposure, indicating critical damage levels.
This study investigates the effects of reactor-neutron irradiation on the electrical characteristics of NiO/Ga2O3 heterojunction diodes (HJDs) and Ni/Ga2O3 Schottky barrier diodes (SBDs) for 1 MeV (Ga2O3) equivalent neutron fluences from 6.17×1011 to 6.17×1014 n/cm2. The novel contribution of this research is the comparison of SBD and HJD diodes, with and without edge termination, and the development of a dose-response relationship for carrier concentration reduction in gallium oxide diodes. Capacitance-voltage (C-V) characterization enabled a determination of the spatially dependent carrier removal rate. Forward current-voltage (I-V) characteristics were used to compare changes in the ideality factor and series resistance. The ideality factor was unaffected by irradiation, while the series resistance increased sharply after a fluence of 2.47×1014 n/cm2.
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Ferguson et al. (2026) studied this question.
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