Gate-tunable polarization-sensitive broadband photodetector based on PdSe₂/2H-MoTe₂heterostructure.

, the reversible photoconductive and photovoltaic operation modes are realized, where an enhanced rectification ratio of 9.2 × 103 at a positive gate bias and a pronounced negative photoresponse with an extremely R of -25.6 A/W at a negative gate bias are highlighted. Broadband detection from 520 to 2000 nm with a peak responsivity of 151.1 A/W and polarization-dependent photoresponse from 520 to 1550 nm with a maximum polarization ratio up to 3.34 are demonstrated. Such multifunctional integration offers new insights into developing the highly integrated and intelligent optoelectronic systems by constructing the anisotropic heterostructures.