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Investigates quantum efficiency and detectivity in n-Si Schottky photodetectors, indicating potential for better optoelectronic devices.
The interfacial energetics of metal-semiconductor junctions critically determine the carrier transport behavior and overall performance of Schottky-based optoelectronic devices. In this work, unmodified carbon quantum dots (CQDs) and phosphorus-doped carbon...
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Hussaini et al. (2026) studied this question.
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