Comparative study of high-k Metal Oxide-PVP/PMMA hybrid Gate Dielectrics for low-temperature, all-solution-processed flexible In 2 O 3 thin film transistors

J. Meza-Arroyo; Mullapudi Gouri Syamala Rao; Orlando Martinez; Julia W.P. Hsu; Rafael Ramirez-Bon; Víctor Hugo Martínez Landeros

doi:10.1039/d6tc00361c

January 1, 2026Journal of Materials Chemistry C

Comparative study of high-k Metal Oxide-PVP/PMMA hybrid Gate Dielectrics for low-temperature, all-solution-processed flexible In 2 O 3 thin film transistors

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Key Points

The study aims to compare the performance of various high-k metal oxide hybrid dielectrics for flexible TFTs.
Evaluated high-k metal oxide-PVP/PMMA hybrid dielectric layers.
Conducted assessments on capacitance, leakage current, and mechanical robustness.
Tested dielectric compatibility with low-temperature processing on polymer substrates.
High-k dielectrics demonstrated enhanced capacitance compared to traditional dielectrics.
Low leakage current was achieved, improving device performance.
Mechanical robustness of the gate dielectrics indicates suitability for flexible applications.

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Implication

Comparative study evaluates dielectric performance for low-temperature, solution-processed flexible transistors, indicating optimal materials for reliability.

Abstract

Flexible thin-film transistors (TFTs) require dielectric layers that simultaneously provide high capacitance, low leakage current, and mechanical robustness at processing while being compatible with low-temperature processing on polymer substrates. Here,...

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Meza-Arroyo et al. (2026) studied this question.

synapsesocial.com/papers/69f9898f15588823dae185e4 https://doi.org/10.1039/d6tc00361c

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Comparative study of high-k Metal Oxide-PVP/PMMA hybrid Gate Dielectrics for low-temperature, all-solution-processed flexible In 2 O 3 thin film transistors

Key Points

Ask about this paper

Implication

Abstract

Discussion

Cite This Study

Comparative study of high-k Metal Oxide-PVP/PMMA hybrid Gate Dielectrics for low-temperature, all-solution-processed flexible In 2 O 3 thin film transistors

Key Points

Ask about this paper

Implication

Abstract

Discussion

Cite This Study

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