Polypyridinophane Thin Films via CVD process for Polymeric Dielectric Layer on Oxide TFT with Ultrahigh Dielectric Constant

Won Kyung Park; Jae Woo Park; Gunoh Lee; SeongCheol Jang; Hyun-Suk Kim; Kyung Jin Lee

doi:10.1039/d6nh00093b

January 1, 2026Nanoscale Horizons

Polypyridinophane Thin Films via CVD process for Polymeric Dielectric Layer on Oxide TFT with Ultrahigh Dielectric Constant

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Key Points

This study aims to improve the performance of oxide thin-film transistors by developing high-k polymer gate dielectrics.
Developed pyridinophane-based polymers processed via Gorham-type chemical vapor deposition (CVD).
Evaluated dielectric properties and stability of the polymer films on oxide substrates.
Achieved significantly enhanced capacitance with the new polymer dielectrics compared to traditional materials.
Demonstrated improved interfacial stability, leading to better performance in thin-film transistors.

Implication

Demonstrates improved capacitance in oxide thin-film transistors, suggesting advances in polymeric dielectrics.

Abstract

High-k polymer gate dielectrics are desirable for oxide thin-film transistors but limited by low capacitance and interfacial instability. Here, pyridinophane-based polymers with main-chain heteroatoms are processed via a Gorham-type chemical...

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Cite This Study

Park et al. (2026) studied this question.

synapsesocial.com/papers/6a0ea16cbe05d6e3efb60037 https://doi.org/10.1039/d6nh00093b

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Polypyridinophane Thin Films via CVD process for Polymeric Dielectric Layer on Oxide TFT with Ultrahigh Dielectric Constant

Key Points

Implication

Abstract

Discussion

Cite This Study

Polypyridinophane Thin Films via CVD process for Polymeric Dielectric Layer on Oxide TFT with Ultrahigh Dielectric Constant

Key Points

Implication

Abstract

Discussion

Cite This Study

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