The dynamics of initial layer-by-layer growth and subsequent nucleation of quantum dots of Si and Ge on Si(001) were studied combining reflection high-energy electron diffraction, scanning electron microscopy and atomic force microscopy. It was shown that the processes occurring at the initial stage determine further growth of the heterostructure and final shape and density of nanoislands. The mechanisms of terrace formation, occurrence and dynamics of dimer rows of the 2 × N superstructure, and effects of temperature on the growth characteristics were described. The obtained experimental dependences show the critical relationship between the synthesis parameters (growth temperature), epitaxial growth processes and the characteristics of the resulting nanoislands. The fundamental studies conducted make it possible to create self-organizing quantum dots of a given size and density for advanced optoelectronics, including infrared photosensitive elements and single-photon detectors.
Kukenov et al. (Thu,) studied this question.