Improving 3C-SiC Quality Through Wafer-Bonded Switchback Epitaxy

The crystallinity of cubic silicon carbide (3C-SiC) epilayers is improved through the use of a novel wafer bonding and regrowth technique resulting in a reduction in planar defects. The process involves the epitaxial growth of a 3–6 µm thick 3C-SiC seed on silicon (Si), which is polished and bonded to a new handle wafer before the original substrate and defective interface region of the 3C-SiC epilayer are removed. Further epitaxial growth on this Bonded Switchback template results in higher quality 3C-SiC epilayers through the reduction in crystal mosaicity, stacking fault defects, and elimination of interface voids. The process could be applied to 3C-SiC grown on both on- and off-axis substrates, and the form of the new handle has no impact on the growth process, enabling this technology to be applied to sapphire or hexagonal 4H-SiC substrates. The use of such substrates would overcome the thermal budget limitations of Si substrates for 3C-SiC heteroepitaxy and ion implantation. Bonded Switchback can improve material quality for applications in power electronics, as well as see the heterogeneous integration of 3C-SiC into other device structures, potentially leading to a new range of hybrid 3C-SiC/Si devices without the high density of defects observed at the interface between these two materials.