We report on world's smallest HfO 2 -based Resistive RAM (RRAM) cell to date, featuring a novel Hf/HfO x resistive element stack, with an area of less than 10×10 nm 2 , fast ns-range on/off switching times at low-voltages and with a switching energy per bit of <;0.1pJ. With excellent endurance of more than 5.10 7 cycles, large on/off verified-window (>;50), no closure of the on/off window after 30hrs/200C and failure-free device operation after 30hrs/250C thermal stress, the major device-level nonvolatile memory requirements are met. Furthermore, we clarify the impact of film crystallinity on cell operation from a scalability viewpoint, the role of the cap layer and bring insight into the switching mechanisms.
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Govoreanu et al. (2011) studied this question.