Electrically Tunable Tunneling and Spectral Response in WSe ₂ /h‐BN/CdSe/Graphene Heterostructure

Sang‐Hyeon Lee; Justice Agbeshie Teku; Min‐Hye Jeong; Jae‐Hyeon Ahn; Weon‐Sik Chae; Dohyun Kwak; J D Lee

doi:10.1002/smll.73645

May 6, 2026SmallOpen Access

Electrically Tunable Tunneling and Spectral Response in WSe ₂ /h‐BN/CdSe/Graphene Heterostructure

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Key Points

This research aims to explore the voltage-dependent tunneling effects in a heterostructure composed of WSe2, h-BN, CdSe, and Graphene.
Conducted spectral responsivity measurements
Utilized scanning photocurrent measurements to assess tunneling dynamics
Investigated the effects of varying voltage on carrier motion in the device
Determined a significant tunability in tunneling behavior across the heterostructure with varying voltage.
Observed enhanced spectral responsivity through the engineered interfaces of the materials.

Implication

Establishes voltage-dependent tunneling in heterostructures, indicating control over carrier dynamics.

Abstract

and CdSe QDs is observed through spectral responsivity and scanning photocurrent measurements. This work establishes a voltage-dependent tunneling platform that enables deterministic control of carrier dynamics in mixed-dimensional optoelectronic devices.

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Cite This Study

Lee et al. (2026) studied this question.

synapsesocial.com/papers/69fd7fa1bfa21ec5bbf081c8 https://doi.org/10.1002/smll.73645

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Electrically Tunable Tunneling and Spectral Response in WSe ₂ /h‐BN/CdSe/Graphene Heterostructure

Key Points

Implication

Abstract

Discussion

Cite This Study

Electrically Tunable Tunneling and Spectral Response in WSe ₂ /h‐BN/CdSe/Graphene Heterostructure

Key Points

Implication

Abstract

Discussion

Cite This Study

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